Jin-cheng Ma: search on Z-Library

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1

Clinical study on the treatment of premature ejaculation by Uighur medicine Gu-jing-mai-si-ha Tablet (固精麦斯哈片)

Guo-hong Song, Upur Halmurat, Jin-cheng Geng, Lian-cheng Feng, shabi Yilihamujiang, Chao Ma, Jun Liu

Journal:

Chinese Journal of Integrative Medicine

Year:

2007

Language:

english

File:

PDF, 103 KB

english, 2007

2

Neutron irradiation effects on AlGaN/GaN high electron mobility transistors

Lü, Ling, Zhang, Jin-Cheng, Xue, Jun-Shuai, Ma, Xiao-Hua, Zhang, Wei, Bi, Zhi-Wei, Zhang, Yue, Hao, Yue

Journal:

Chinese Physics B

Year:

2012

Language:

english

File:

PDF, 339 KB

english, 2012

3

Reliability investigation of AlGaN/GaN high electron mobility transistors under reverse-bias stress

Chen, Wei-Wei, Ma, Xiao-Hua, Hou, Bin, Zhao, Sheng-Lei, Zhu, Jie-Jie, Zhang, Jin-Cheng, Hao, Yue

Journal:

Microelectronics Reliability

Year:

2014

Language:

english

File:

PDF, 2.34 MB

english, 2014

4

Temperature dependences of Raman scattering in different types of GaN epilayers

Xue, Xiao-Yong, Xu, Sheng-Rui, Zhang, Jin-Cheng, Lin, Zhi-Yu, Ma, Jun-Cai, Liu, Zi-Yang, Xue, Jun-Shuai, Hao, Yue

Journal:

Chinese Physics B

Year:

2012

Language:

english

File:

PDF, 223 KB

english, 2012

5

Xanthomonas campestris FabH is required for branched-chain fatty acid and DSF-family quorum sensing signal biosynthesis

Yu, Yong-Hong, Hu, Zhe, Dong, Hui-Juan, Ma, Jin-Cheng, Wang, Hai-Hong

Journal:

Scientific Reports

Year:

2016

Language:

english

File:

PDF, 1.33 MB

english, 2016

6

Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures

Liu, Zi-Yang, Zhang, Jin-Cheng, Duan, Huan-Tao, Xue, Jun-Shuai, Lin, Zhi-Yu, Ma, Jun-Cai, Xue, Xiao-Yong, Hao, Yue

Journal:

Chinese Physics B

Year:

2011

Language:

english

File:

PDF, 120 KB

english, 2011

7

Comparative Study of the Characteristics of the Basal Plane Stacking Faults of Nonpolar a -Plane and Semipolar (112̄2) GaN

Xu, Sheng-Rui, Lin, Zhi-Yu, Xue, Xiao-Yong, Liu, Zi-Yang, Ma, Jun-Cai, Jiang, Teng, Mao, Wei, Wang, Dang-Hui, Zhang, Jin-Cheng, Hao, Yue

Journal:

Chinese Physics Letters

Year:

2012

Language:

english

File:

PDF, 648 KB

english, 2012

8

Enhancement of Breakdown Voltage in AlGaN/GaN High Electron Mobility Transistors Using Double Buried p-Type Layers

Luo, Jun, Zhao, Sheng-Lei, Lin, Zhi-Yu, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue

Journal:

Chinese Physics Letters

Year:

2016

Language:

english

File:

PDF, 761 KB

english, 2016

9

Efficient Nitrogen Fixation via a Redox-Flexible Single-Fe-Site With Reverse-Dative Fe→B σ Bonding

Lu, Jun-Bo, Ma, Xue-Lu, Wang, Jia-Qi, Liu, Jin-Cheng, Xiao, Hai, Li, Jun

Journal:

Journal of Physical Chemistry A

Year:

2018

Language:

english

File:

PDF, 1.08 MB

english, 2018

10

Anti-Helicobacter pylori therapy followed by celecoxib on progression of gastric precancerous lesions

Zhang, Li-Jing, Wang, Shi-Yan, Huo, Xiao-Hui, Zhu, Zhen-Long, Chu, Jian-Kun, Ma, Jin-Cheng, Cui, Dong-Sheng, Gu, Ping, Zhao, Zeng-Ren, Wang, Ming-Wei, Yu, Jun

Journal:

World Journal of Gastroenterology

Year:

2009

Language:

english

File:

PDF, 1.07 MB

english, 2009

11

An ethanol induciblealcsystem for regulating gene expression inBeauveria bassiana

Xing-gang Liao, Yong-jun Zhang, Yan-hua Fan, Jin-cheng Ma, Yong-hong Zhou, Dan Jin, Yan Pei

Journal:

World Journal of Microbiology and Biotechnology

Year:

2009

Language:

english

File:

PDF, 250 KB

english, 2009

12

The effect of a HfO 2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

Mao, Wei, Yang, Cui, Hao, Yue, Ma, Xiao-Hua, Wang, Chong, Zhang, Jin-Cheng, Liu, Hong-Xia, Bi, Zhi-Wei, Xu, Sheng-Rui, Yang, Lin-An, Yang, Ling, Zhang, Kai, Zhang, Nai-Qian, Pei, Yi

Journal:

Chinese Physics B

Year:

2011

Language:

english

File:

PDF, 1.54 MB

english, 2011

13

A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

Mao, Wei, She, Wei-Bo, Yang, Cui, Zhang, Chao, Zhang, Jin-Cheng, Ma, Xiao-Hua, Zhang, Jin-Feng, Liu, Hong-Xia, Yang, Lin-An, Zhang, Kai, Zhao, Sheng-Lei, Chen, Yong-He, Zheng, Xue-Feng, Hao, Yue

Journal:

Chinese Physics B

Year:

2014

Language:

english

File:

PDF, 3.50 MB

english, 2014

14

AlGaN Channel High Electron Mobility Transistors with Ultra-Low Drain-Induced-Barrier-Lowering Coefficient

Ha, Wei, Zhang, Jin-Cheng, Zhao, Sheng-Lei, Ge, Sha-Sha, Wen, Hui-Juan, Zhang, Chun-Fu, Ma, Xiao-Hua, Hao, Yue

Journal:

Chinese Physics Letters

Year:

2013

Language:

english

File:

PDF, 65 KB

english, 2013

15

Analysis of the modulation mechanisms of the electric field and breakdown performance in AlGaN/GaN HEMT with a T-shaped field-plate

Mao, Wei, Fan, Ju-Sheng, Du, Ming, Zhang, Jin-Feng, Zheng, Xue-Feng, Wang, Chong, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue

Journal:

Chinese Physics B

Year:

2016

Language:

english

File:

PDF, 518 KB

english, 2016

16

Heterogeneous Fe3 single-cluster catalyst for ammonia synthesis via an associative mechanism

Liu, Jin-Cheng, Ma, Xue-Lu, Li, Yong, Wang, Yang-Gang, Xiao, Hai, Li, Jun

Journal:

Nature Communications

Year:

2018

Language:

english

File:

PDF, 1.75 MB

english, 2018

17

Magnetotransport properties of two-dimensional electron gas in AlGaN/AlN/GaN heterostructures

Ma, Xiao-Hua, Ma, Ping, Jiao, Ying, Yang, Li-Yuan, Ma, Ji-Gang, He, Qiang, Jiao, Sha-Sha, Zhang, Jin-Cheng, Hao, Yue

Journal:

Chinese Physics B

Year:

2011

Language:

english

File:

PDF, 553 KB

english, 2011

18

A study on Al 2 O 3 passivation in GaN MOS-HEMT by pulsed stress

Yuan-Zheng, Yue, Yue, Hao, Jin-Cheng, Zhang, Qian, Feng, Jin-Yu, Ni, Xiao-Hua, Ma

Journal:

Chinese Physics B

Year:

2008

Language:

english

File:

PDF, 301 KB

english, 2008

19

Investigation of passivation effects in AlGaN/GaN metal—insulator—semiconductor high electron-mobility transistor by gate—drain conductance dispersion study

Bi, Zhi-Wei, Hu, Zhen-Hua, Mao, Wei, Hao, Yue, Feng, Qian, Cao, Yan-Rong, Gao, Zhi-Yuan, Zhang, Jin-Cheng, Ma, Xiao-Hua, Chang, Yong-Ming, Li, Zhi-Ming, Mei, Nan

Journal:

Chinese Physics B

Year:

2011

Language:

english

File:

PDF, 1.81 MB

english, 2011

20

Trap states induced by reactive ion etching in AlGaN/GaN high-electron-mobility transistors

Luo, Jun, Zhao, Sheng-Lei, Mi, Min-Han, Hou, Bin, Yang, Xiao-Lei, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue

Journal:

Chinese Physics B

Year:

2015

Language:

english

File:

PDF, 341 KB

english, 2015

21

Using in-process measurements of open-gate structures to evaluate threshold voltage of normally-off GaN-based high electron mobility transistors

Hou, Bin, Ma, Xiao-Hua, Chen, Wei-Wei, Zhu, Jie-Jie, Zhao, Sheng-Lei, Chen, Yong-He, Xie, Yong, Zhang, Jin-Cheng, Hao, Yue

Journal:

Applied Physics Letters

Year:

2015

Language:

english

File:

PDF, 1.25 MB

english, 2015

22

Ralstonia solanacearum RSp0194 Encodes a Novel 3-Keto-Acyl Carrier Protein Synthase III

Mao, Ya-Hui, Ma, Jin-Cheng, Li, Feng, Hu, Zhe, Wang, Hai-Hong, Rao, Christopher V.

Journal:

Year:

2015

Language:

english

File:

PDF, 3.42 MB

english, 2015

23

High-efficiency S-band harmonic tuning GaN amplifier

Cao, Meng-Yi, Zhang, Kai, Chen, Yong-He, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue

Journal:

Chinese Physics B

Year:

2014

Language:

english

File:

PDF, 421 KB

english, 2014

24

High temperature characteristics of AlGaN/GaN high electron mobility transistors

Yang, Li-Yuan, Hao, Yue, Ma, Xiao-Hua, Zhang, Jin-Cheng, Pan, Cai-Yuan, Ma, Ji-Gang, Zhang, Kai, Ma, Ping

Journal:

Chinese Physics B

Year:

2011

Language:

english

File:

PDF, 597 KB

english, 2011

25

Optimization of ohmic contact for AlGaNGaN HEMT by introducing patterned etching in ohmic area

Wang, Chong, Zhao, Meng-Di, He, Yun-Long, Zheng, Xue-Feng, Wei, Xiao-Xiao, Mao, Wei, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue

Journal:

Solid-State Electronics

Year:

2017

Language:

english

File:

PDF, 1.76 MB

english, 2017

26

Degradation mechanism of enhancement-mode AlGaN/GaN HEMTs using fluorine ion implantation under the on-state gate overdrive stress

Sun, Wei-Wei, Zheng, Xue-Feng, Fan, Shuang, Wang, Chong, Du, Ming, Zhang, Kai, Chen, Wei-Wei, Cao, Yan-Rong, Mao, Wei, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue

Journal:

Chinese Physics B

Year:

2015

Language:

english

File:

PDF, 3.50 MB

english, 2015

27

Schottky forward current transport mechanisms in AlGaN/GaN HEMTs over a wide temperature range

Wu, Mei, Zheng, Da-Yong, Wang, Yuan, Chen, Wei-Wei, Zhang, Kai, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue

Journal:

Chinese Physics B

Year:

2014

Language:

english

File:

PDF, 318 KB

english, 2014

28

The size and ratio of homologous sequence to non-homologous sequence in gene disruption cassette influences the gene targeting efficiency inBeauveria bassiana

Jin-Cheng Ma, Qun Zhou, Yong-Hong Zhou, Xing-Gang Liao, Yong-Jun Zhang, Dan Jin, Yan Pei

Journal:

Applied Microbiology and Biotechnology

Year:

2009

Language:

english

File:

PDF, 271 KB

english, 2009

29

Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

Zhao, Sheng-Lei, Mi, Min-Han, Hou, Bin, Luo, Jun, Wang, Yi, Dai, Yang, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue

Journal:

Chinese Physics B

Year:

2014

Language:

english

File:

PDF, 1.42 MB

english, 2014

30

Investigation of trap states in Al 2 O 3 InAlN/GaN metal–oxide–semiconductor high-electron-mobility transistors

Zhang, Peng, Zhao, Sheng-Lei, Xue, Jun-Shuai, Zhu, Jie-Jie, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue

Journal:

Chinese Physics B

Year:

2015

Language:

english

File:

PDF, 541 KB

english, 2015

31

Ralstonia solanacearumfatty acid composition is determined by interaction of two 3-ketoacyl-acyl carrier protein reductases encoded on separate replicons

Feng, Sai-Xiang, Ma, Jin-Cheng, Yang, Ji, Hu, Zhe, Zhu, Lei, Bi, Hong-Kai, Sun, Yi-Rong, Wang, Hai-Hong

Journal:

BMC Microbiology

Year:

2015

Language:

english

File:

PDF, 1.73 MB

english, 2015

32

Dental caries is negatively correlated with body mass index among 7-9 years old children in Guangzhou, China

Liang, Jing-jing, Zhang, Zhe-qing, Chen, Ya-jun, Mai, Jin-cheng, Ma, Jun, Yang, Wen-han, Jing, Jin

Journal:

BMC Public Health

Year:

2016

Language:

english

File:

PDF, 501 KB

english, 2016

33

Low power fluorine plasma effects on electrical reliability of AlGaN/GaN high electron mobility transistor

Yang, Ling, Zhou, Xiao-Wei, Ma, Xiao-Hua, Lv, Ling, Cao, Yan-Rong, Zhang, Jin-Cheng, Hao, Yue

Journal:

Chinese Physics B

Year:

2017

Language:

english

File:

PDF, 455 KB

english, 2017

34

Secondary-atom-assisted synthesis of single iron atoms anchored on N-doped carbon nanowires for oxygen reduction reaction

Li, Jin-Cheng, Xiao, Fei, Zhong, Hong, Li, Tao, Xu, Mingjie, Ma, Lu, Cheng, Min, Liu, Dong, Feng, Shuo, Shi, Qiurong, Cheng, Hui-Ming, Liu, Chang, Du, Dan, Beckman, Scott P., Pan, Xiaoqing, Lin, Yuehe

Journal:

Year:

2019

Language:

english

File:

PDF, 628 KB

english, 2019

35

Molecular nitrogen promotes catalytic hydrodeoxygenation

Duan, Haohong, Liu, Jin-Cheng, Xu, Ming, Zhao, Yufei, Ma, Xue-Lu, Dong, Juncai, Zheng, Xusheng, Zheng, Jianwei, Allen, Christopher S., Danaie, Mohsen, Peng, Yung-Kang, Issariyakul, Titipong, Chen, Don

Journal:

Nature Catalysis

Year:

2019

File:

PDF, 1.73 MB

2019

36

Degradation in AlGaN-based UV-C LEDs under constant current stress: A study on defect behaviors

Wang, Ying-Zhe, Zheng, Xue-Feng, Zhu, Jia-Duo, Xu, Lin-Lin, Xu, Sheng-Rui, Liang, Ren-Li, Dai, Jiang-Nan, Li, Pei-Xian, Zhou, Xiao-Wei, Mao, Wei, Zhang, Jin-Cheng, Ma, Xiao-Hua, Hao, Yue

Journal:

Applied Physics Letters

Year:

2020

File:

PDF, 1.82 MB

2020

37

Simulation and Experimentation for Low Density Drain AlGaN/GaN HEMT

Wang, Chong, He, Yun-Long, Ding, Ning, Zheng, Xue-Feng, Zhang, Peng, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue

Journal:

Chinese Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.10 MB

english, 2014

38

Stress and morphology of a nonpolar a -plane GaN layer on r -plane sapphire substrate

Xu, Sheng-Rui, Hao, Yue, Zhang, Jin-Cheng, Xue, Xiao-Yong, Li, Pei-Xian, Li, Jian-Ting, Lin, Zhi-Yu, Liu, Zi-Yang, Ma, Jun-Cai, He, Qiang, Lü, Ling

Journal:

Chinese Physics B

Year:

2011

Language:

english

File:

PDF, 1.04 MB

english, 2011

39

Improvement of reverse blocking performance in vertical power MOSFETs with Schottky–drain-connected semisuperjunctions

Mao, Wei, Wang, Hai-Yong, Wang, Xiao-Fei, Du, Ming, Zhang, Jin-Feng, Zheng, Xue-Feng, Wang, Chong, Ma, Xiao-Hua, Zhang, Jin-Cheng, Hao, Yue

Journal:

Chinese Physics B

Year:

2017

Language:

english

File:

PDF, 8.87 MB

english, 2017

40

InAlN/AlN/GaN Field-Plated MIS-HEMTs with a Plasma-Enhanced Chemical Vapor Deposition SiN Gate Dielectric

Mao, Wei, Hao, Yue, Yang, Cui, Zhang, Jin-Cheng, Ma, Xiao-Hua, Wang, Chong, Liu, Hong-Xia, Yang, Lin-An, Zhang, Jin-Feng, Zheng, Xue-Feng, Zhang, Kai, Chen, Yong-He, Yang, Li-Yuan

Journal:

Chinese Physics Letters

Year:

2013

Language:

english

File:

PDF, 106 KB

english, 2013

41

AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al 2 O 3 Laminated Dielectric by Atomic Layer Deposition

Bi, Zhi-Wei, Hao, Yue, Feng, Qian, Gao, Zhi-Yuan, Zhang, Jin-Cheng, Mao, Wei, Zhang, Kai, Ma, Xiao-Hua, Liu, Hong-Xia, Yang, Lin-An, Mei, Nan, Chang, Yong-Ming

Journal:

Chinese Physics Letters

Year:

2012

Language:

english

File:

PDF, 1.31 MB

english, 2012

42

Novel Xanthomonas campestris Long-Chain-Specific 3-Oxoacyl-Acyl Carrier Protein Reductase Involved in Diffusible Signal Factor Synthesis

Hu, Zhe, Dong, Huijuan, Ma, Jin-Cheng, Yu, Yonghong, Li, Kai-Hui, Guo, Qiao-Qiao, Zhang, Chao, Zhang, Wen-Bin, Cao, Xinyun, Cronan, John E., Wang, Haihong, Lindow, Steven E.

Journal:

Year:

2018

Language:

english

File:

PDF, 1.35 MB

english, 2018

43

Impacts of SiN passivation on the degradation modes of AlGaN/GaN high electron mobility transistors under reverse-bias stress

Chen, Wei-Wei, Ma, Xiao-Hua, Hou, Bin, Zhu, Jie-Jie, Chen, Yong-He, Zheng, Xue-Feng, Zhang, Jin-Cheng, Hao, Yue

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.14 MB

english, 2014

44

Cloning and sequencing of GH , H-FABP and HSP72 genes in yak

Zhong, Jin-cheng, Ma, Zhi-jie, Ou, Jiang-tao, Zhu, Xiao, Liu, Sheng-gang

Journal:

Canadian Journal of Animal Science

Year:

2007

File:

PDF, 341 KB

2007

45

MEPO promotes neurogenesis and angiogenesis but suppresses gliogenesis in mice with acute ischemic stroke

Zhang, Si-jia, Wang, Rong-liang, Zhao, Hai-ping, Tao, Zhen, Li, Jin-cheng, Ju, Fei, Han, Zi-ping, Ma, Qing-feng, Liu, Ping, Ma, Shu-bei, Cao, Guo-dong, Luo, Yu-min

Journal:

European Journal of Pharmacology

Year:

2019

File:

PDF, 1.40 MB

2019

46

The reliability of AlGaN/GaN high electron mobility transistors under step-electrical stresses

Ma, Xiao-Hua, Jiao, Ying, Ma, Ping, He, Qiang, Ma, Ji-Gang, Zhang, Kai, Zhang, Hui-Long, Zhang, Jin-Cheng, Hao, Yue

Journal:

Chinese Physics B

Year:

2011

Language:

english

File:

PDF, 54 KB

english, 2011

47

Influence of vertebral column distraction on spinal cord volume: an experimental study in a goat model

Qiu, Feng, Yang, Jin-Cheng, Ma, Xiang-Yang, Xu, Jun-Jie, Yang, Qing-Lei, Zhou, Xin, Xiao, Yao-Sheng, Hu, Hai-Sheng, Xia, Li-Hui

Journal:

Archives of Orthopaedic and Trauma Surgery

Year:

2015

Language:

english

File:

PDF, 1.37 MB

english, 2015

48

Fabrication and characterization of groove-gate MOSFETs based on a self-aligned CMOS process

Xiao-Hua, Ma, Yue, Hao, Bao-Gang, Sun, Hai-Xia, Gao, Hong-Xia, Ren, Jin-Cheng, Zhang, Jin-Feng, Zhang, Xiao-Ju, Zhang, Wei-Dong, Zhang

Journal:

Chinese Physics

Year:

2006

Language:

english

File:

PDF, 274 KB

english, 2006

49

Relationship between Spinal Cord Volume and Spinal Cord Injury due to Spinal Shortening

Qiu, Feng, Yang, Jin-Cheng, Ma, Xiang-Yang, Xu, Jun-Jie, Yang, Qing-Lei, Zhou, Xin, Xiao, Yao-Sheng, Hu, Hai-Sheng, Xia, Li-Hui, de Castro, Fernando

Journal:

Year:

2015

Language:

english

File:

PDF, 9.16 MB

english, 2015

50

Investigation of trap states under Schottky contact in GaN/AlGaN/AlN/GaN high electron mobility transistors

Ma, Xiao-Hua, Chen, Wei-Wei, Hou, Bin, Zhang, Kai, Zhu, Jie-Jie, Zhang, Jin-Cheng, Zheng, Xue-Feng, Hao, Yue

Journal:

Applied Physics Letters

Year:

2014

Language:

english

File:

PDF, 1.47 MB

english, 2014

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